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See Technical Specifications

SMUN2211T1G

NPN Bipolar Digital Transistor (BRT)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SMUN2211T1G
Datasheet:

SMUN2211T1G Datasheet (PDF)
Case Outline:

318D-04
MSL Temp (°C):

260
Container Type:

REEL
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for SMUN2211T1G

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SMUN2211T1G General Description

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Key Features

Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Specifications

Status	Active	Case Outline	318D-04
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	NPN	Typical Input Resistor	10 kOhms
Typical Resistor Ratio	1	Mounting Style	SMD/SMT
Collector- Emitter Voltage VCEO Max	50 V	Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	MUN2211
Height	1.09 mm	Length	2.9 mm
Product Type	BJTs - Bipolar Transistors - Pre-Biased	Qualification	AEC-Q101
Factory Pack Quantity	3000	Subcategory	Transistors
Width	1.5 mm	Unit Weight	0.000282 oz