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STHU36N60DM6AG

N-Channel 600 V 29A (Tc) 210W (Tc) Surface Mount HU3PAK

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STHU36N60DM6AG General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Lower RDS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min - Temperature (°C) max -

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