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STW22N95K5

Automotive-grade N-channel 950 V, 0.280 Ohm typ., MDmesh K5 Power MOSFET in a TO-247 package

STW22N95K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • Industry’s lowest RDS(on) x area
  • Industry’s best FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series Automotive, AEC-Q101, SuperMESH5™
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 100 V
FET Feature - Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number STW22

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Ratings and Reviews

More
A
A**n 07/22/2023

The display reached kursk for 6.5 days. Packed standard, arrived without damage. In working with the floppy drive emulator gotek checked, works perfectly. Good seller, 5 stars!

17
S
S**e 04/07/2022

as described, received on time

3
M
M**n 01/04/2021

Quality is average, corresponds to the price.

19

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Availability: 6082 PCS

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