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STW22N95K5
Automotive-grade N-channel 950 V, 0.280 Ohm typ., MDmesh K5 Power MOSFET in a TO-247 package
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Manufacturer:
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Mfr.Part #:
STW22N95K5
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Datasheet:
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Series:
Automotive, AEC-Q101, SuperMESH5™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
950 V
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EDA/CAD Models:
Availability: 6082 PCS
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STW22N95K5 General Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Key Features
- AEC-Q101 qualified
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | Automotive, AEC-Q101, SuperMESH5™ |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 950 V | Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 330mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA | Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 100 V |
FET Feature | - | Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | STW22 |
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Availability: 6082 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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The display reached kursk for 6.5 days. Packed standard, arrived without damage. In working with the floppy drive emulator gotek checked, works perfectly. Good seller, 5 stars!