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See Technical Specifications

2MBI100VA-060-50 +BOM

IGBT, MODULE, N-CH, 600V, 100A

Manufacturer:

Fujitsu Semiconductor Limited
Mfr.Part #:

2MBI100VA-060-50
Datasheet:

2MBI100VA-060-50 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Case Connection:

ISOLATED
Collector Current-Max (IC):

100 A
EDA/CAD Models:

Request Free CAD Models for 2MBI100VA-060-50

2MBI100VA-060-50 General Description

Featuring N-channel transistor polarity, the 2MBI100VA-060-50 IGBT module offers a reliable solution for applications requiring a collector current of up to 100A. With a low collector-emitter saturation voltage of 1.6V, this module optimizes energy efficiency and performance. The power dissipation of 650W allows for sustained operation under varying conditions. The collector-emitter voltage of 600V provides ample voltage tolerance for demanding tasks. Moreover, the RoHS compliance of the transistor case underscores the module's commitment to environmental sustainability

Specifications

Part Life Cycle Code	Active	ECCN Code	EAR99
Case Connection	ISOLATED	Collector Current-Max (IC)	100 A
Collector-Emitter Voltage-Max	600 V	Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	7.2 V	Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-XUFM-X7	Number of Elements	2
Number of Terminals	7	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Surface Mount	NO	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	600 ns	Turn-on Time-Nom (ton)	650 ns
VCEsat-Max	2.15 V