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2MBI75N-120 +BOM
FUJI IGBT Modules
MODULE-
Manufacturer:
-
Mfr.Part #:
2MBI75N-120
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Datasheet:
-
Part Life Cycle Code:
Obsolete
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Pin Count:
7
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ECCN Code:
EAR99
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HTS Code:
8541.29.00.95
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EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2MBI75N-120, guaranteed quotes back within 12hr.
Availability: 6611 PCS
Please fill in the short form below and we will provide you the quotation immediately.
Key Features
- Square RBSOA
- Low Saturation Voltage
- Less Total Power Dissipation
- Improved FWD Characteristic
- Minimized Internal Stray Inductance
- Overcurrent Limiting Function (4~5 Times Rated Current)
Specifications
Part Life Cycle Code | Obsolete | Pin Count | 7 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | Case Connection | ISOLATED |
Collector Current-Max (IC) | 75 A | Collector-Emitter Voltage-Max | 1200 V |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT | Fall Time-Max (tf) | 500 ns |
JESD-30 Code | R-XUFM-X7 | Number of Elements | 2 |
Number of Terminals | 7 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 1200 W | Power Dissipation-Max (Abs) | 600 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | UNSPECIFIED | Terminal Position | UPPER |
Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 850 ns | Turn-on Time-Nom (ton) | 650 ns |
VCEsat-Max | 3.3 V |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Quality Guarantee
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In Stock: 6,611
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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