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See Technical Specifications

2N3055G +BOM

Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3)

Manufacturer:

ON SEMICONDUCTOR
Mfr.Part #:

2N3055G
Datasheet:

2N3055G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

2
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for 2N3055G

2N3055G General Description

The 2N3055G PNP Bipolar Power Transistor is a crucial component for high power amplifier and switching amplifier circuits. Its robust design and performance make it an ideal choice for applications that require high power output

Key Features

Smart Power Grid Integration
Crypto-Accelerator Hardware Support
Fault-Tolerant Network Architecture
Real-Time Location Identification
Persistent Data Recovery Mechanism
Multicore Processor with Parallel Execution

Application

Industrial

Specifications

Source Content uid	2N3055G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	2
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	37 Weeks, 4 Days
Case Connection	COLLECTOR	Collector Current-Max (IC)	15 A
Collector-Emitter Voltage-Max	60 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	5	JEDEC-95 Code	TO-204AA
JESD-30 Code	O-MBFM-P2	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	2
Operating Temperature-Max	200 °C	Operating Temperature-Min	-65 °C
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	115 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	PIN/PEG
Terminal Position	BOTTOM	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	2.5 MHz