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2N3117 +BOM

Bipolar Transistors - BJT

2N3117 General Description

Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18

Specifications

Pbfree Code No Part Life Cycle Code Active
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.21.00.95 Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 4.5 pF Collector-Emitter Voltage-Max 60 V
Configuration SINGLE DC Current Gain-Min (hFE) 400
JEDEC-95 Code TO-18 JESD-30 Code O-MBCY-W3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.36 W Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form WIRE
Terminal Position BOTTOM Transistor Application AMPLIFIER
Transistor Element Material SILICON VCEsat-Max 0.35 V

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