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2N3391A +BOM

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

2N3391A General Description

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

Specifications

Source Content uid 2N3391A Part Life Cycle Code Obsolete
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 0.1 A Collector-Base Capacitance-Max 10 pF
Collector-Emitter Voltage-Max 25 V Configuration SINGLE
DC Current Gain-Min (hFE) 250 JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 125 °C
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form WIRE Terminal Position BOTTOM
Transistor Element Material SILICON

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