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2N3497 +BOM

Bipolar Transistors - BJT Small-Signal BJT

2N3497 General Description

RF Transistor PNP 120V 100mA 150MHz 400mW Through Hole TO-18 (TO-206AA)

Key Features

  • General-purpose silicon transistor for switching and amplifier applications.
  • Housed in TO-39 case.
  • Also available in chip form using the 5620 chip geometry.
  • The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases.

Specifications

Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 120V
Frequency - Transition 150MHz Noise Figure (dB Typ @ f) -
Gain - Power - Max 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 10V Current - Collector (Ic) (Max) 100mA
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole

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