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2N3497 +BOM
Bipolar Transistors - BJT Small-Signal BJT
TO-18 (TO-206AA)-
Manufacturer:
-
Mfr.Part #:
2N3497
-
Datasheet:
-
Transistor Type:
PNP
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Voltage - Collector Emitter Breakdown (Max):
120V
-
Frequency - Transition:
150MHz
-
Power - Max:
400mW
-
EDA/CAD Models:
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Availability: 5561 PCS
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2N3497 General Description
RF Transistor PNP 120V 100mA 150MHz 400mW Through Hole TO-18 (TO-206AA)
Key Features
- General-purpose silicon transistor for switching and amplifier applications.
- Housed in TO-39 case.
- Also available in chip form using the 5620 chip geometry.
- The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases.
Specifications
Transistor Type | PNP | Voltage - Collector Emitter Breakdown (Max) | 120V |
Frequency - Transition | 150MHz | Noise Figure (dB Typ @ f) | - |
Gain | - | Power - Max | 400mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 10V | Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | -65°C ~ 200°C (TJ) | Mounting Type | Through Hole |
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In Stock: 5,561
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $90.224 | $90.22 |
200+ | $36.001 | $7,200.20 |
500+ | $34.798 | $17,399.00 |
1000+ | $34.204 | $34,204.00 |
The prices below are for reference only.
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