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2N3638A +BOM

Bipolar transistor with small signal capability, PNP type, featuring 0.8A collector current and 25V collector-emitter breakdown voltage

2N3638A General Description

Bipolar (BJT) Transistor PNP 25 V 800 mA 625 mW Through Hole TO-92-3

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Collector Current-Max (IC) 0.8 A Collector-Emitter Voltage-Max 25 V
DC Current Gain-Min (hFE) 100 JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Polarity/Channel Type PNP Qualification Status Not Qualified
Surface Mount NO Terminal Form WIRE
Terminal Position BOTTOM Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz

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