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2N3739 +BOM

Bipolar Transistors - BJT Power BJT

Bipolar (BJT) Transistor NPN 300 V 1 A 20 W Through Hole TO-66 (TO-213AA)

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Case Connection	COLLECTOR	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	300 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	25	JEDEC-95 Code	TO-66
JESD-30 Code	O-MBFM-P2	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	2
Operating Temperature-Max	200 °C	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	20 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN LEAD
Terminal Form	PIN/PEG	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	10 MHz	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	300 V	Collector- Base Voltage VCBO	325 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	2.5 V
Pd - Power Dissipation	20 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 200 C
Continuous Collector Current	1 A	DC Collector/Base Gain hfe Min	25
DC Current Gain hFE Max	200	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si