Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
80V 25W 40@500mA,5V NPN TO-66(TO-213AA) Bipolar Transistors - BJT ROHS
TO-66-2Manufacturer:
Mfr.Part #:
2N3767
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
80 V
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on 2N3767. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
Bipolar (BJT) Transistor NPN 80 V 500 µA 25 W Through Hole TO-66 (TO-213AA)
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum DC Collector Current | 4 A | Maximum Operating Temperature | + 200 C |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Technology | Si |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $70.911 | $70.91 |
200+ | $27.443 | $5,488.60 |
500+ | $26.477 | $13,238.50 |
1000+ | $26.002 | $26,002.00 |
The prices below are for reference only.
2N2905
MICROCHIP
1000+ $19.458
2N3773
Onsemi
100+ $0.928
2N3055
Onsemi
1000+ $0.646
2N2219
Microchip
Excellent reliability and fast switching times make this BJTs transistor ideal for use in automotive, industrial, and consumer electronics
2N1711
Stmicroelectronics
With a gain of 8dB, this transistor is suitable for amplifying low-level signals