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2N3792 +BOM

80V 5W 50@1A,2V 10A PNP TO-3 Bipolar Transistors - BJT ROHS

2N3792 General Description

Bipolar (BJT) Transistor PNP 80 V 10 A 150 W Through Hole TO-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 10 A Pd - Power Dissipation 150 W
Gain Bandwidth Product fT 4 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Continuous Collector Current - 10 A
DC Collector/Base Gain hfe Min 50 at 1 A, 2 V DC Current Gain hFE Max 180 at 1 A, 2 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 10
Subcategory Transistors Technology Si

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In Stock: 7,816

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $110.744 $110.74
200+ $42.857 $8,571.40
500+ $41.351 $20,675.50
1000+ $40.606 $40,606.00

The prices below are for reference only.

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