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2N3904A +BOM

Bipolar Transistors - BJT

2N3904A General Description

GENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURES● Low Leakage Current   : ICEX=50nA(Max.), IBL=50nA(Max.)   @VCE=30V, VEB=3V.● Low Saturation Voltage   : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.● Low Collector Output Capacitance   : Cob=4pF(Max.) @VCB=5V.● Complementary to 2N3906A.

Key Features

  • Low Leakage Current
  • : ICEX=50nA(Max.), IBL=50nA(Max.)
  • @VCE=30V, VEB=3V.
  • Low Saturation Voltage
  • : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
  • Low Collector Output Capacitance
  • : Cob=4pF(Max.) @VCB=5V.
  • Complementary to 2N3906A.

Application

  • SWITCHING APPLICATION.

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code ECCN Code EAR99
Collector Current-Max (IC) 0.2 A Collector-Emitter Voltage-Max 40 V
Configuration SINGLE DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-92 JESD-30 Code O-PBCY-T3
Number of Elements 1 Number of Terminals 3
Polarity/Channel Type NPN Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 300 MHz
Turn-off Time-Max (toff) 250 ns Turn-on Time-Max (ton) 70 ns

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