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2N4919G +BOM

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.

2N4919G General Description

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.

Key Features

  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement to NPN 2N4921, 2N4922, 2N4923
  • Pb-Free Package is Available

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 3 A Pd - Power Dissipation 30 W
Gain Bandwidth Product fT 3 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series 2N4919
Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 40
Height 11.04 mm Length 7.74 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 500
Subcategory Transistors Technology Si
Width 2.66 mm Unit Weight 0.068784 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.768 $0.77
200+ $0.299 $59.80
500+ $0.287 $143.50
1000+ $0.283 $283.00

The prices below are for reference only.

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