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Bipolar (BJT) Transistor
-Manufacturer:
Mfr.Part #:
2N5337
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
80 V
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Bipolar (BJT) Transistor
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector-Emitter Saturation Voltage | 1.2 V |
Maximum DC Collector Current | 5 A | Pd - Power Dissipation | 6 W |
Gain Bandwidth Product fT | 30 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $33.491 | $33.49 |
200+ | $13.364 | $2,672.80 |
500+ | $12.917 | $6,458.50 |
1000+ | $12.697 | $12,697.00 |
The prices below are for reference only.
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1000+ $19.458
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100+ $0.928
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1000+ $0.646
2N2219
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Excellent reliability and fast switching times make this BJTs transistor ideal for use in automotive, industrial, and consumer electronics
2N1711
Stmicroelectronics
With a gain of 8dB, this transistor is suitable for amplifying low-level signals