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See Technical Specifications

2N6404G +BOM

Thyristor Discrete Single 16A 600V TO220 Through Hole Technology

Manufacturer:

LITTELFUSE
Mfr.Part #:

2N6404G
Datasheet:

2N6404G Datasheet (PDF)
Breakover Current IBO Max:

160 A
Rated Repetitive Off-State Voltage VDRM:

600 V
Off-State Leakage Current @ VDRM IDRM:

0.01 mA
Forward Voltage Drop:

1.7 V
EDA/CAD Models:

Request Free CAD Models for 2N6404G

2N6404G General Description

Ideal for both industrial and commercial applications, this Silicon Controlled Rectifier offers unparalleled performance and durability. From motor controls to power supplies, the 2N6404G is a reliable choice for any project requiring precise control and efficiency

Key Features

Small Form Factor with High Current Capability for Compact Designs
Limited Inductance and Capacitance for Fast Switching Performance
RoHS Compliance for Reduced Waste and Environmental Impact

Specifications

Breakover Current IBO Max	160 A	Rated Repetitive Off-State Voltage VDRM	600 V
Off-State Leakage Current @ VDRM IDRM	0.01 mA	Forward Voltage Drop	1.7 V
Gate Trigger Voltage (Vgt)	1.5 V	Gate Trigger Current (Igt)	30 mA
Holding Current (Ih Max)	40 mA	Mounting Style	Through Hole
Packaging	Bulk	Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C	Factory Pack Quantity	500