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See Technical Specifications

2N6508TG +BOM

SCR 600 V 25 A Standard Recovery Through Hole TO-220AB

Manufacturer:

LITTELFUSE
Mfr.Part #:

2N6508TG
Datasheet:

2N6508TG Datasheet (PDF)
Breakover Current IBO Max:

250 A
Rated Repetitive Off-State Voltage VDRM:

600 V
Off-State Leakage Current @ VDRM IDRM:

0.01 mA
Forward Voltage Drop:

1.8 V
EDA/CAD Models:

Request Free CAD Models for 2N6508TG

2N6508TG General Description

The Silicon Controlled Rectifier is designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.

Key Features

Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
Pb-Free Packages are Available*

Specifications

Breakover Current IBO Max	250 A	Rated Repetitive Off-State Voltage VDRM	600 V
Off-State Leakage Current @ VDRM IDRM	0.01 mA	Forward Voltage Drop	1.8 V
Gate Trigger Voltage (Vgt)	1.5 V	Gate Trigger Current (Igt)	30 mA
Holding Current (Ih Max)	40 mA	Mounting Style	Through Hole
Packaging	Rail	Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C	Factory Pack Quantity	50