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Bipolar (BJT) Transistor NPN 250 V 5 A 5MHz 80 W Through Hole TO-220
TO-220-3Manufacturer:
onsemi
Mfr.Part #:
2N6497
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
250 V
EDA/CAD Models:
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Engineered with precision and expertise, the 2N6497 is optimized for efficiency and durability. Its exceptional performance characteristics make it an ideal choice for applications where reliability is paramount. Whether you are designing a new power supply unit or enhancing an existing circuit, the 2N6497 offers the features and capabilities required for success
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 250 V | Collector- Base Voltage VCBO | 350 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 5 A | Pd - Power Dissipation | 80 W |
Gain Bandwidth Product fT | 5 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 5 A |
Height | 9.28 mm | Length | 10.28 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Technology | Si |
Width | 4.82 mm | Unit Weight | 0.211644 oz |
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