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N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
TO-92-3 LFManufacturer:
onsemi
Mfr.Part #:
2N7000-D26Z
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Leveraging the latest in DMOS technology, the 2N7000-D26Z N-channel Small Signal MOSFETs from ON Semiconductor are designed to excel in minimizing on-state resistance and facilitating rapid switching. Their ability to handle currents up to 400 mA DC and 2 A in pulsed form makes them versatile across various projects. Known for their reliability and robustness, these MOSFETs are dependable components for applications where consistent performance is crucial. Their affinity for low-voltage and low-current setups further adds to their appeal, making them a go-to choice for engineers aiming for efficiency and performance
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Qg - Gate Charge | - | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 400 mW |
Channel Mode | Enhancement | Series | 2N7000 |
Configuration | Single | Forward Transconductance - Min | 0.1 S |
Height | 5.33 mm | Length | 5.2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.19 mm |
Part # Aliases | 2N7000_D26Z | Unit Weight | 0.007090 oz |
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