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2N7000BU +BOM

N-channel metal-oxide semiconductor field-effect transisto

2N7000BU General Description

N-Channel 60 V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

Key Features

  • Fast switching times
  • Improved inductive ruggedness
  • Lower input capacitance
  • Extended safe operating area
  • Improved high-temperature reliability

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 200 mA Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge - Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 400 mW
Channel Mode Enhancement Series 2N7000
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 0.1 S Height 5.33 mm
Length 5.2 mm Product MOSFET Small Signal
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 10000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Width 4.19 mm Part # Aliases 2N7000BU_NL
Unit Weight 0.016000 oz

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