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2N7002/HAMR +BOM

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

2N7002/HAMR General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

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Key Features

  • Suitable for high-speed applications
  • Fast response time
  • Low power consumption
  • Small size package
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Application

  • Temperature sensors with digital output
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Specifications

Source Content uid 2N7002/HAMR Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.3 A Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.83 W
Reference Standard IEC-60134 Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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In Stock: 7,838

Minimum Order: 1

Qty. Unit Price Ext. Price
10+ $0.037 $0.37
100+ $0.030 $3.00
300+ $0.027 $8.10
3000+ $0.024 $72.00
6000+ $0.022 $132.00
9000+ $0.021 $189.00

The prices below are for reference only.

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