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See Technical Specifications

2N7002DW-7-F +BOM

N-MOSFET Transistor

Manufacturer:

Diodes Incorporated
Mfr.Part #:

2N7002DW-7-F
Datasheet:

2N7002DW-7-F Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7002DW-7-F

2N7002DW-7-F General Description

With a compact size and high performance characteristics, the 2N7002DW-7-F is suitable for use in various electronic devices and circuits. Its N-channel design allows for efficient signal amplification and switching, making it ideal for applications such as audio amplifiers, signal processing circuits, and power management systems. The silicon construction ensures durable and reliable performance in a wide range of operating conditions

Key Features

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 3 and 4)

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	70 V
Id - Continuous Drain Current	230 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	400 mW	Channel Mode	Enhancement
Series	2N7002DW	Configuration	Dual
Forward Transconductance - Min	80 mS	Height	1 mm
Length	2.2 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Type	Enhancement Mode Field Effect Transistor	Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	7 ns	Width	1.35 mm
Unit Weight	0.000265 oz