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2N7002E-T1-GE3 +BOM

N-channel metal-oxide semiconductor field-effect transistor with a 60V maximum voltage and 0.24A maximum current in a SOT-23 package

2N7002E-T1-GE3 General Description

N-Channel 60 V 240mA (Ta) 350mW (Ta) Surface Mount TO-236

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition
  • Low On-Resistance: 3 
  • Low Threshold: 2 V (typ.)
  • Low Input Capacitance: 25 pF
  • Fast Switching Speed: 7.5 ns
  • Low Input and Output Leakage
  • Compliant to RoHS Directive 2002/95/EC

Application

  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
  • Battery Operated Systems
  • Solid-State Relays

Specifications

Series - FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 240mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 5 V FET Feature -
Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number 2N7002

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C
C**n 02/03/2021

Well packed. Came in for a couple of weeks

9

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