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2N7002HR +BOM
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SOT-23-
Manufacturer:
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Mfr.Part #:
2N7002HR
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Datasheet:
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Id:
http://www.data.nexperia.com/id/plm/salesItem/934661228215
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Nc12:
934661228215
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PackingDescription:
Reel 7" Q3/T4
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PackingQuantity:
3,000
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EDA/CAD Models:
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Availability: 4050 PCS
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2N7002HR General Description
When it comes to selecting a dependable FET for diverse applications, the 2N7002HR stands out for its impressive specifications. With a 60-volt drain-source voltage rating and a continuous drain current of 115 mA, this N-channel enhancement mode field-effect transistor (FET) is designed to meet the requirements of high-speed switching applications. The FET's low threshold voltage of 1 volt is particularly beneficial for low-power applications where efficiency is a priority. Additionally, the 2N7002HR's low on-resistance of 7 ohms enhances its performance in reducing power dissipation and increasing efficiency in high-speed switching circuits. Its compact SOT-23 package further adds to its appeal for surface mount applications in various industries
Key Features
- Suitable for automotive use
- Low power consumption guaranteed
- Rapidly charging and discharging
- Excellent thermal stability
Application
- Audio amplifier
- Voltage regulator
- Motion sensor
- Signal conditioner
Specifications
id | http://www.data.nexperia.com/id/plm/salesItem/934661228215 | nc12 | 934661228215 |
name | 2N7002HR | packingDescription | Reel 7" Q3/T4 |
packingQuantity | 3,000 | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 360 mA |
Rds On - Drain-Source Resistance | 1.6 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.4 V | Qg - Gate Charge | 300 pC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 420 mW | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 4 ns |
Product Type | MOSFET | Rise Time | 3 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 6 ns | Typical Turn-On Delay Time | 2 ns |
Part # Aliases | 934661228215 |
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In Stock: 4,050
Minimum Order: 1
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