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2N7002K,215 +BOM
General Purpose FET for Small Signal Applications
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
NXP USA Inc.
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Mfr.Part #:
2N7002K,215
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Datasheet:
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Series:
TrenchMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
60 V
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EDA/CAD Models:
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2N7002K,215 General Description
N-Channel 60 V 340mA (Ta) 830mW (Ta) Surface Mount SOT-23 (TO-236AB)
Key Features
- Logic level compatible
- Subminiature surface mount package
- Very fast switching
- Gate-source ESD protection diodes.
Specifications
Series | TrenchMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.9Ohm @ 500mA, 10V | Vgs(th) (Max) @ Id | 2V @ 1mA |
Vgs (Max) | ±15V | Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
Power Dissipation (Max) | 830mW (Ta) | Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | 2N70 |
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In Stock: 9,501
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