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N-channel MOSFET with a maximum voltage rating of 60V and a current rating of 0.38A, operating up to 150°C, compliant with RoHS regulations
SOT23-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
2N7002KQ-7
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
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N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 380 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Qg - Gate Charge | 300 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 540 mW |
Channel Mode | Enhancement | Fall Time | 9.9 ns |
Product Type | MOSFET | Rise Time | 3.4 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 15.7 ns | Typical Turn-On Delay Time | 3.9 ns |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 0.3 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | Power Dissipation (Max) | 370mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | 2N7002 |
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