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See Technical Specifications

2N7002NXBKR +BOM

MOSFETs with null SOT-23 packaging and a maximum voltage rating of 60V

Manufacturer:

Nexperia USA Inc.
Mfr.Part #:

2N7002NXBKR
Datasheet:

2N7002NXBKR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

270mA (Ta), 330mA (Tc)
EDA/CAD Models:

Request Free CAD Models for 2N7002NXBKR

2N7002NXBKR General Description

The 2N7002NXBKR is a compact N-channel MOSFET transistor specifically designed for low-voltage applications, offering unparalleled efficiency and reliability. Manufactured by On Semiconductor, this surface-mount package transistor is perfect for switching circuits that require minimal power consumption. With a maximum drain-source voltage of 60V and continuous drain current of 300mA, the 2N7002NXBKR is an ideal choice for many low-power applications

Key Features

Fast recovery time
Low leakage current
Trench design optimized
ESD protected up to 1kV

Application

Power supply controller
Motor driver
LED dimmer

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	270mA (Ta), 330mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	1 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	23.6 pF @ 10 V
Power Dissipation (Max)	310mW (Ta), 1.67W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	2N7002