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2N7002PV,115 +BOM

60 V, 350 mA dual N-channel Trench MOSFET

2N7002PV,115 General Description

The 2N7002PV,115 is a powerful dual N-channel enhancement mode field-effect transistor designed for high-performance applications. Its ultra small SOT666 surface-mounted device (SMD) plastic package makes it perfect for space-constrained environments where efficiency is key. The transistor utilizes cutting-edge trench MOSFET technology to ensure optimal performance, reliability, and efficiency

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Key Features

  • Enhanced security features
  • Improved data transfer speed
  • Automatic fault detection and recovery
  • Simplified user interface design
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Application

  • Robust relay switch
  • Speedy load driver
  • Dynamic line switch
  • Precision circuits
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 350 mA Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.75 V
Qg - Gate Charge 800 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 330 mW
Channel Mode Enhancement Qualification AEC-Q101
Product Type MOSFET Factory Pack Quantity 4000
Subcategory MOSFETs Part # Aliases 934064136115
Unit Weight 0.000099 oz Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V Power - Max 330mW
Operating Temperature 150°C (TJ) Grade Automotive
Mounting Type Surface Mount Base Product Number 2N7002

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