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2N7008-G +BOM

60V, 7.5 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET.

Manufacturer:

Microchip
Mfr.Part #:

2N7008-G
Datasheet:

2N7008-G Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7008-G

2N7008-G General Description

2N7008 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	230 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Configuration	Single
Height	5.33 mm	Length	5.21 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Unit Weight	0.016000 oz