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2SA1483-Y(TE12L,F) +BOM

PW-MINI Power Transistor, BJT Type with Pb-Free Composition, MOQ of 1000, Rated for 45V Voltage, Capable of Frequencies up to 200MHz

  • Manufacturer:

    Toshiba

  • Mfr.Part #:

    2SA1483-Y(TE12L,F)

  • Datasheet:

    2SA1483-Y(TE12L,F) Datasheet (PDF) pdf-icon

  • Mounting Style:

    SMD/SMT

  • Transistor Polarity:

    PNP

  • Configuration:

    Single

  • Collector- Emitter Voltage VCEO Max:

    45 V

2SA1483-Y(TE12L,F) General Description

RF Transistor PNP 45V 200mA 200MHz Surface Mount PW-MINI

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Toshiba Original Stock

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 200 mA Gain Bandwidth Product fT 200 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2SA Continuous Collector Current - 200 mA
DC Collector/Base Gain hfe Min 40 DC Current Gain hFE Max 200
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1000
Subcategory Transistors Technology Si

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