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2SC5661T2LP +BOM
NPN Silicon Bipolar Transistor for RF Small Signal Applications, VMT3 Package, 0.05A IC, Very High Frequency Range
VMT3-
Manufacturer:
-
Mfr.Part #:
2SC5661T2LP
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Datasheet:
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Mounting Style:
SMD/SMT
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
20 V
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EDA/CAD Models:
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Availability: 7072 PCS
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2SC5661T2LP General Description
RF Transistor NPN 20V 50mA 1.5GHz 150mW Surface Mount VMT3
Key Features
- 1) High transition frequency. (Typ. fT = 1.5GHz)
- 2) Small rbb’⋅Ccand high gain. (Typ. 6ps)
- 3) Small NF.
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 20 V | Collector- Base Voltage VCBO | 30 V |
Emitter- Base Voltage VEBO | 3 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 50 mA | Pd - Power Dissipation | 150 mW |
Gain Bandwidth Product fT | 1.5 GHz | Minimum Operating Temperature | - |
Maximum Operating Temperature | + 150 C | Series | 2SC5661 |
Continuous Collector Current | 50 mA | DC Collector/Base Gain hfe Min | 56 |
DC Current Gain hFE Max | 180 | Height | 0.5 mm |
Length | 1.2 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 8000 | Subcategory | Transistors |
Technology | Si | Width | 0.8 mm |
Unit Weight | 0.000917 oz | Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 20V | Frequency - Transition | 1.5GHz |
Noise Figure (dB Typ @ f) | 4.5dB @ 200MHz | Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 10mA, 10V | Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | 2SC5661 |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
5+ | $0.083 | $0.42 |
50+ | $0.067 | $3.35 |
150+ | $0.060 | $9.00 |
500+ | $0.054 | $27.00 |
2500+ | $0.050 | $125.00 |
5000+ | $0.048 | $240.00 |
The prices below are for reference only.