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2SAR552PHZGT100 +BOM

Trans GP BJT PNP 30V 3A 2000mW Automotive 4-Pin(3+Tab) MPT T/R

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

2SAR552PHZGT100
Datasheet:

2SAR552PHZGT100 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

PNP
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

30 V

2SAR552PHZGT100 General Description

Bipolar Transistors - BJT PNP Middle Power Transistor (-30V / -3A) 2SAR552PHZG is Low VCE(sat) and high speed switching transistor for Low Frequency Amplifier. It is a highly reliable product for automotive.

Key Features

Low saturation voltage V
CE(sat)
C
B
High speed switching
AEC-Q101 Qualified

Specifications

Product Category:	Bipolar Transistors - BJT	Mounting Style:	SMD/SMT
Transistor Polarity:	PNP	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	30 V	Collector- Base Voltage VCBO:	30 V
Emitter- Base Voltage VEBO:	6 V	Collector-Emitter Saturation Voltage:	200 mV
Maximum DC Collector Current:	3 A	Pd - Power Dissipation:	500 mW
Gain Bandwidth Product fT:	330 MHz	Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C	Packaging:	Cut Tape
Continuous Collector Current:	3 A	DC Collector/Base Gain hfe Min:	200 at 0.5 A, 2 V
DC Current Gain hFE Max:	500 at 0.5 A, 2 V	Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	1000	Subcategory:	Transistors
Technology:	Si	Part # Aliases:	2SAR552PHZG