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Bipolar (BJT) Transistor NPN 80 V 4 A 280MHz 1 W Surface Mount HUML2020L3
DFN2020-3SManufacturer:
Mfr.Part #:
2SCR564F3TR
Datasheet:
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100mA, 2A
EDA/CAD Models:
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Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors | Series | - |
Transistor Type | NPN | Current - Collector (Ic) (Max) | 4 A |
Voltage - Collector Emitter Breakdown (Max) | 80 V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 2A |
Current - Collector Cutoff (Max) | 1µA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
Power - Max | 1 W | Frequency - Transition | 280MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Product Category: | Bipolar Transistors - BJT | Mounting Style: | SMD/SMT |
Transistor Polarity: | NPN | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 80 V | Collector- Base Voltage VCBO: | 80 V |
Emitter- Base Voltage VEBO: | 6 V | Collector-Emitter Saturation Voltage: | 100 mV |
Maximum DC Collector Current: | 4 A | Pd - Power Dissipation: | 1 W |
Gain Bandwidth Product fT: | 280 MHz | Minimum Operating Temperature: | - |
Maximum Operating Temperature: | + 150 C | Packaging: | Cut Tape |
Continuous Collector Current: | 4 A | DC Collector/Base Gain hfe Min: | 120 at 500mA, 3 V |
DC Current Gain hFE Max: | 390 at 500mA, 3 V | Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 3000 | Subcategory: | Transistors |
Technology: | Si | Part # Aliases: | 2SCR564F3 |
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