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See Technical Specifications

7MBI50N-120 +BOM

0A 1200V IGBT Module with Diode

Manufacturer:

Fuji Electric Co Ltd
Mfr.Part #:

7MBI50N-120
Datasheet:

7MBI50N-120 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

22
ECCN Code:

EAR99
Case Connection:

ISOLATED

7MBI50N-120 General Description

The 7MBI50N-120 power module by Fuji Electric is a top-of-the-line solution for high-power applications. With its advanced Gen 5 IGBT technology, this module offers unparalleled efficiency and reliability. The low VCE(sat) and switching losses make it perfect for applications requiring high switching frequencies, ensuring optimal performance

Key Features

The 7MBI50N-120 has a maximum voltage of 12V and a current rating of 5A with compact design and high efficiency for motor control and power supply applications
Suitable for industries such as automotive, industrial automation, and consumer electronics
Features high reliability and low noise for various applications

Application

Powerful semiconductor module
Used in industrial applications
Efficient switching capabilities

Specifications

Part Life Cycle Code	Obsolete	Pin Count	22
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	50 A	Collector-Emitter Voltage-Max	1200 V
Configuration	COMPLEX	JESD-30 Code	R-XUFM-X22
Number of Elements	7	Number of Terminals	22
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	400 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
VCEsat-Max	3.3 V