This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

7MBR50VM120-50 +BOM

IGBT, 7 PK, V SER, 50A, 1200V, M719

Manufacturer:

FUJI ELECTRIC
Mfr.Part #:

7MBR50VM120-50
Datasheet:

7MBR50VM120-50 Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

23
ECCN Code:

EAR99
Case Connection:

ISOLATED

7MBR50VM120-50 General Description

The 7MBR50VM120-50 IGBT transistor is a robust and versatile component with a N Channel polarity, 50A DC collector current, and 1200V collector emitter voltage. Its 280W power dissipation capability and 23-pin module case style make it ideal for high-power applications. With a collector emitter voltage of 2.2V and V(br)ceo of 1.2kV, this transistor offers consistent and reliable performance across a wide operating temperature range

Key Features

Included Rectifier and Brake Chopper
Square RBSOA
Low Saturation Voltage
Overcurrent Limiting Function ( ~ 3 Times Rated Current )

Specifications

Part Life Cycle Code	Active	Pin Count	23
Reach Compliance Code		ECCN Code	EAR99
Case Connection	ISOLATED	Collector Current-Max (IC)	50 A
Collector-Emitter Voltage-Max	1200 V	Configuration	COMPLEX
JESD-30 Code	R-XUFM-X21	Number of Elements	7
Number of Terminals	21	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	530 ns	Turn-on Time-Nom (ton)	390 ns