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BFR193FH6327XTSA1 +BOM

RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3

BFR193FH6327XTSA1 General Description

RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3

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Key Features

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
  • Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain 12.5dB Power - Max 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA, 8V Current - Collector (Ic) (Max) 80mA
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number BFR193 RHoS yes
PBFree yes HalogenFree yes

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BFR193FH6327XTSA1 Datasheet PDF

Preliminary Specification BFR193FH6327XTSA1 PDF Download

BFR193FH6327XTSA1 PDF Preview

In Stock: 4,437

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.296 $0.30
200+ $0.118 $23.60
500+ $0.114 $57.00
1000+ $0.113 $113.00

The prices below are for reference only.

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