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High durability RF bipolar junction transistor integrated circuit
TO-50-3Manufacturer:
Mfr.Part #:
BFR91A
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
12 V
EDA/CAD Models:
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Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 12 V | Collector- Base Voltage VCBO | 20 V |
Emitter- Base Voltage VEBO | 2 V | Maximum DC Collector Current | 50 mA |
Pd - Power Dissipation | 300 mW | Gain Bandwidth Product fT | 5 GHz |
DC Collector/Base Gain hfe Min | 25 | Height | 2.5 mm |
Length | 4.8 mm | Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Width | 4.8 mm |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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