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BSC016N04LSG +BOM

This N Channel TDSON-8-EP(5x6) MOSFET has a low on-resistance of 2.3mΩ at 4.5V and 50A

  • Manufacturer:

    Infineon Technologies

  • Mfr.Part #:

    BSC016N04LSG

  • Datasheet:

    BSC016N04LSG Datasheet (PDF) pdf-icon

  • Series:

    OptiMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain To Source Voltage (Vdss):

    40 V

BSC016N04LSG General Description

N-Channel 40 V 31A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1

BSC016N04LSG

Specifications

Series OptiMOS™ FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 20 V Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number BSC016

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