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BSC028N06LS3GATMA1 +BOM

N-Channel 60 V 23A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1

Manufacturer:

Infineon Technologies
Mfr.Part #:

BSC028N06LS3GATMA1
Datasheet:

BSC028N06LS3GATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for BSC028N06LS3GATMA1

BSC028N06LS3GATMA1 General Description

The BSC028N06LS3GATMA1 Power MOSFET is a game-changer for power supply and motor control applications. With a robust 60V drain-source voltage rating and a continuous drain current of 100A, this MOSFET is designed to deliver exceptional performance in high-power switching scenarios. Its ultra-low on-resistance of 2.8mΩ ensures maximum efficiency and minimal power dissipation, making it an ideal choice for demanding applications that require high power handling capabilities

Key Features

Avalanche-tested for reliability
High-speed switching performance
Low noise and interference

Application

Smart home devices
Aviation systems
Solar inverters

Specifications

Series	OptiMOS™	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 50A, 10V	Vgs(th) (Max) @ Id	2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs	175 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V	Power Dissipation (Max)	2.5W (Ta), 139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC028