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BSC059N04LSGATMA1 +BOM

High-performance N-channel MOSFET designed for voltage switching applications up to 40V and current flow of up to 16A

Manufacturer:

INFINEON
Mfr.Part #:

BSC059N04LSGATMA1
Datasheet:

BSC059N04LSGATMA1 Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for BSC059N04LSGATMA1

BSC059N04LSGATMA1 General Description

Furthermore, the gate threshold voltage of 2.0V ensures seamless integration with various gate drive circuits, offering flexibility and compatibility across different systems. The low gate charge of 71nC further enhances the MOSFET's performance by enabling fast switching speeds and reducing switching losses

Specifications

Source Content uid	BSC059N04LSGATMA1	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Additional Feature	LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)	25 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	16 A	Drain-source On Resistance-Max	0.0059 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	292 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	73 A
Rds On - Drain-Source Resistance	4.9 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V	Qg - Gate Charge	40 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	50 W	Channel Mode	Enhancement
Tradename	OptiMOS	Series	OptiMOS 3
Fall Time	3.8 ns	Forward Transconductance - Min	48 S
Height	1.27 mm	Length	5.9 mm
Product Type	MOSFET	Rise Time	3.4 ns
Factory Pack Quantity	5000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	5.6 ns	Width	5.15 mm
Part # Aliases	BSC059N04LS G SP000391499	Unit Weight	0.005256 oz