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See Technical Specifications

BSC060N10NS3G +BOM

N-CH 100V transistor with 14.9A current, featuring MOSFET technology in 8-pin TDSON EP packaging on tape and reel

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSC060N10NS3G
Datasheet:

BSC060N10NS3G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for BSC060N10NS3G

BSC060N10NS3G General Description

N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

Specifications

Source Content uid	BSC060N10NS3G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	230 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	14.9 A	Drain-source On Resistance-Max	0.006 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	125 W	Pulsed Drain Current-Max (IDM)	360 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	14.9A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA	Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	4900 pF @ 50 V
Power Dissipation (Max)	125W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	BSC060