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BSC067N06LS3GATMA1 +BOM

N-type Metal-Oxide-Semiconductor Field-Effect Transistor with a maximum voltage rating of 60 volts and a current rating of 15 amps

BSC067N06LS3GATMA1 General Description

The BSC067N06LS3GATMA1 OptiMOS™ 60V stands out as the go-to solution for synchronous rectification in switched mode power supplies (SMPS) used in servers, desktops, and tablet chargers. Its PG-TDSON-8 packaging ensures a compact and efficient design, while its RoHS compliance highlights its commitment to environmental sustainability, making it a reliable choice for power supply applications

Key Features

  • Fast switching frequency
  • Low electromagnetic emission
  • Compact component design
  • Ruggedized construction
  • Excellent thermal performance

Application

  • Smartphones
  • Laptop batteries
  • Solar inverters
  • Robotics applications
  • LED displays
  • Power banks

Specifications

Source Content uid BSC067N06LS3GATMA1 Pbfree Code No
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 47 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 15 A Drain-source On Resistance-Max 0.0067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form FLAT
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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