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BSS84DW-7-F +BOM

Transistor MOSFET Array Dual P-CH 50V 130mA 6-Pin SOT-363 T/R

BSS84DW-7-F General Description

The BSS84DW-7-F MOSFET P-channel transistor is a high-quality electronic component suitable for a wide range of circuit designs. With its dual P-channel configuration, it offers a low on-resistance (Rds(on)) of 6ohm and a maximum continuous drain current of -130mA. The transistor has a drain-source voltage rating of -50V and operates effectively within a temperature range of -55°C to +150°C. Its SOT-363 package and surface mount termination make it easy to integrate into various electronic systems, ensuring reliable performance

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.95
Factory Lead Time 78 Weeks Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V Drain Current-Max (ID) 0.13 A
Drain-source On Resistance-Max 10 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF JESD-30 Code R-PDSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.3 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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