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BSZ024N04LS6ATMA1 +BOM

Transistor MOSFET N-channel 40V 24A 8-pin TSDSON EP Tape and Reel

BSZ024N04LS6ATMA1 General Description

N-Channel 40 V 24A (Ta), 40A (Tc) 2.5W (Ta), 75W (Tc) Surface Mount PG-TSDSON-8-FL

Specifications

Part Life Cycle Code Active Reach Compliance Code not_compliant
Avalanche Energy Rating (Eas) 137 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 109 A Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 19 pF
JESD-30 Code S-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 520 A Surface Mount YES
Terminal Finish TIN Terminal Form NO LEAD
Terminal Position DUAL Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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