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Superior switching capability in power electronic circui
TO-3-2Manufacturer:
Tt Electronics
Mfr.Part #:
BUV20
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
125 V
EDA/CAD Models:
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Bipolar (BJT) Transistor NPN 125 V 50 A 8MHz 250 W Chassis Mount TO-3
LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
SWITCHING REGULATORS
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 125 V | Collector- Base Voltage VCBO | 160 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.2 V |
Maximum DC Collector Current | 60 A | Pd - Power Dissipation | 250 W |
Gain Bandwidth Product fT | 8 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Continuous Collector Current | 50 A |
DC Collector/Base Gain hfe Min | 20 at 25 A, 2 V | DC Current Gain hFE Max | 60 at 25 A, 2 V |
Height | 9.15 mm | Length | 39.12 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 10 |
Subcategory | Transistors | Technology | Si |
Width | 26.67 mm |
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