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Si-based power transistor offering high current handlin
TO-3Manufacturer:
Onsemi
Mfr.Part #:
BUV61
Datasheet:
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
200 V
Collector- Base Voltage VCBO:
300 V
EDA/CAD Models:
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Housed in a TO-3 case style, the BUV61 offers a robust and compact form factor, facilitating easy integration into various circuit designs. Its RoHS compliance underscores its commitment to environmental sustainability, meeting stringent regulatory standards while delivering exceptional performance
Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 200 V |
Collector- Base Voltage VCBO | 300 V | Emitter- Base Voltage VEBO | 7 V |
Maximum DC Collector Current | 50 A | Pd - Power Dissipation | 250 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si |
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