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CA3227E +BOM
Bipolar Transistors - BJT
DIP-
Manufacturer:
-
Mfr.Part #:
CA3227E
-
Datasheet:
-
Transistor Polarity:
NPN
-
Configuration:
Quint
-
Collector- Emitter Voltage VCEO Max:
8 V
-
Collector- Base Voltage VCBO:
12 V
-
EDA/CAD Models:
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Availability: 6161 PCS
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CA3227E General Description
RF Transistor 5 NPN 8V 20mA 3GHz 85mW Through Hole 16-PDIP
Specifications
Product Category: | Bipolar Transistors - BJT | Transistor Polarity: | NPN |
Configuration: | Quint | Collector- Emitter Voltage VCEO Max: | 8 V |
Collector- Base Voltage VCBO: | 12 V | Emitter- Base Voltage VEBO: | - |
Maximum DC Collector Current: | 20 mA | Pd - Power Dissipation: | 85 mW |
Minimum Operating Temperature: | - 65 C | Maximum Operating Temperature: | + 175 C |
DC Collector/Base Gain hfe Min: | 40 at 1 mA, 6 V | Height: | 4.95 mm |
Length: | 19.68 mm | Product Type: | BJTs - Bipolar Transistors |
Subcategory: | Transistors | Technology: | Si |
Width: | 7.11 mm | Unit Weight: | 0.057419 oz |
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In Stock: 6,161
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $6.601 | $6.60 |
250+ | $2.554 | $638.50 |
500+ | $2.466 | $1,233.00 |
1000+ | $2.421 | $2,421.00 |
The prices below are for reference only.