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Individual Bipolar Junction Transistor Array in DIP Package
PDIP-16Manufacturer:
Mfr.Part #:
CA3127E
Datasheet:
Transistor Polarity:
NPN
Configuration:
Quint
Collector- Emitter Voltage VCEO Max:
15 V
Collector- Base Voltage VCBO:
20 V
EDA/CAD Models:
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Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
Configuration | Quint | Collector- Emitter Voltage VCEO Max | 15 V |
Collector- Base Voltage VCBO | 20 V | Emitter- Base Voltage VEBO | 4 V |
Maximum DC Collector Current | 20 mA | Pd - Power Dissipation | 85 mW |
Gain Bandwidth Product fT | 1 GHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 125 C | DC Collector/Base Gain hfe Min | 35 at 5 mA, 6 V |
Height | 4.95 mm | Length | 19.68 mm |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si | Width | 7.11 mm |
Unit Weight | 0.057419 oz |
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