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IRFF330 +BOM
Exploring the Features of IRFF330 N-Channel Power MOSFETs
TO-205AF-
Manufacturer:
-
Mfr.Part #:
IRFF330
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Datasheet:
-
Part Life Cycle Code:
Transferred
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ECCN Code:
EAR99
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HTS Code:
8541.29.00.95
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Case Connection:
DRAIN
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EDA/CAD Models:
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IRFF330 General Description
N CHANNEL MOSFET, 400V, 3A TO-205AF; Tra; N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Key Features
- 3.5A, 400V
- rDS(ON) = 1.000Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Specifications
Part Life Cycle Code | Transferred | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 400 V | Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 1 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-205AF | JESD-30 Code | O-MBCY-W3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 25 W | Power Dissipation-Max (Abs) | 25 W |
Pulsed Drain Current-Max (IDM) | 14 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | WIRE | Terminal Position | BOTTOM |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 90 ns | Turn-on Time-Max (ton) | 65 ns |
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